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PM50B6L1C060 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # PM50B6L1C060
Description  INTELLIGENT POWER MODULES
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM50B6L1C060 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
INTERNAL FUNCTIONS BLOCK DIAGRAM
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Conditions
Ratings
Unit
VCES
Collector-Emitter Voltage
VD=15V, VCIN=15V
600
V
IC
TC=25°C
50
ICRM
Collector Current
Pulse
100
A
Ptot
Total Power Dissipation
TC=25°C
168
W
IE
Emitter Current
TC=25°C
50
IERM
(Free wheeling Diode Forward current)
Pulse
100
A
Tj
Junction Temperature
-20 ~ +150
°C
*: Tc measurement point is just under the chip.
CONVERTER PART
Symbol
Parameter
Conditions
Ratings
Unit
VCES
Collector-Emitter Voltage
VD=15V, VCIN=15V
600
V
IC
TC=25°C
50
ICRM
Collector Current
Pulse
100
A
Ptot
Total Power Dissipation
TC=25°C
168
W
IE
Emitter Current
TC=25°C
50
IERM
(Free wheeling Diode Forward current)
Pulse
100
A
IF
Di Forward Current
TC=25°C
50
A
VR(DC)
Di Rated DC Reverse Voltage
TC=25°C
600
V
Tj
Junction Temperature
-20 ~ +150
°C
*: Tc measurement point is just under the chip.
Vcc
Fo
IN
GND
GND SC OT OUT
Vcc
Fo
IN
GND
GND SC OT OUT
Vcc
Fo
IN
GND
GND SC OT OUT
Vcc
Fo
IN
GND
GND SC OT OUT
Vcc
Fo
IN
GND
GND SC OT OUT
Vcc
Fo
IN
GND
GND SC OT OUT
1.5k
Br Fo
VNCWN
VN1
VN
UN
NC NC NC NC
VVPC
VUPC
VP
UP
VVP1
VUP1
VFo
UFo
1.5k
1.5k
P
U
V
W
N
B


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