PJP10N65 datasheet(4/6 Pages) PANJIT

Part #	PJP10N65

Description	650V N-Channel Enhancement Mode MOSFET

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Manufacturer	PANJIT [Pan Jit International Inc.]

Direct Link	http://www.panjit.com.tw

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4 / 6 page

Fig. 7 Gate Charge Waveform

PJP10N65 / PJF10N65

Typical Characteristics Curves ( Ta=25

℃

℃, unless otherwise noted)

Fig.8 Source-Drain Diode Forward Voltage

0.8

0.9

1

1.1

1.2

-50 -25

0

25

50

75 100 125 150

TJ - Junction Temperature (oC)

I

D = 250µA

0.01

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

V

SD - Source-to-Drain Voltage (V)

T

J = 125

oC

25oC

V

GS = 0V

-55oC

0

2

4

6

8

10

12

0

4

8

12 16 20 24 28 32 36 40

Qg - Gate Charge (nC)

I

D =10A

VDS=520V

VDS=325V

VDS=130V

Fig. 7 Gate Charge Waveform

PJP10N65 / PJF10N65

Typical Characteristics Curves ( Ta=25

℃

℃, unless otherwise noted)

Fig.8 Source-Drain Diode Forward Voltage

Fig.9 Breakdown Voltage vs Junction Temperature

STAD-DEC.25.2009

PAGE. 4

0.8

0.9

1

1.1

1.2

-50 -25

0

25

50

75 100 125 150

TJ - Junction Temperature (oC)

I

D = 250µA

0.01

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

V

SD - Source-to-Drain Voltage (V)

T

J = 125

oC

25oC

V

GS = 0V

-55oC

0

2

4

6

8

10

12

0

4

8

12 16 20 24 28 32 36 40

Qg - Gate Charge (nC)

I

D =10A

VDS=520V

VDS=325V

VDS=130V

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PJP10N65 Datasheet(PDF) 4 Page - Pan Jit International Inc.

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