CMLM0205

SURFACE MOUNT

N-CHANNEL MOSFET AND

LOW VF SILICON SCHOTTKY DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0205 is a

Multi Discrete Module™ consisting of a single

N-Channel MOSFET and a Low VF Schottky diode

packaged in a space saving PICOmini™ SOT-563

case. This device is designed for small signal general

purpose applications where size and operational

efficiency are prime requirements.

• Combination: N-Channel MOSFET and

Low VF Schottky Diode.

MARKING CODE: C25

MAXIMUM RATINGS - CASE: (TA=25°C)

SYMBOL

UNITS

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS - Q1: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

60

V

Drain-Gate Voltage

VDG

60

V

Gate-Source Voltage

VGS

40

V

Continuous Drain Current

ID

280

mA

Continuous Source Current (Body Diode)

IS

280

mA

Maximum Pulsed Drain Current

IDM

1.5

A

Maximum Pulsed Source Current

ISM

1.5

A

MAXIMUM RATINGS - D1: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

500

mA

Peak Repetitive Forward Current, tp

≤1.0ms

IFRM

3.5

A

Peak Forward Surge Current, tp = 8.0ms

IFSM

10

A

ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSSF, IGSSR

VGS=20V, VDS=0

100

nA

IDSS

VDS=60V, VGS=0

1.0

μA

IDSS

VDS=60V, VGS=0, TJ=125°C

500

μA

ID(ON)

VGS=10V, VDS=10V

500

mA

BVDSS

VGS=0, ID=10μA

60

V

VGS(th)

VDS=VGS, ID=250μA

1.0

2.5

V

VDS(ON)

VGS=10V, ID=500mA

1.0

V

VDS(ON)

VGS=5.0V, ID=50mA

0.15

V

VSD

VGS=0, IS=400mA

1.2

V

rDS(ON)

VGS=10V, ID=500mA

2.0

Ω

rDS(ON)

VGS=10V, ID=500mA, TJ=125°C

3.5

Ω

SOT-563 CASE

R1 (18-January 2010)

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