SOT223 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 - JANUARY 1996

7

FEATURES

*

Compact geometry

*

Fast switching speeds

*

No secondary breakdown and Excellent temperature stability

*

High input impedance and low current drive

*

Ease of parralleling

APPLICATIONS

*

DC-DC converters

*

Solenoid / relay drivers for automotive applications

*

Stepper motor drivers and Print head drivers

PARTMARKING DETAIL -

ZVN4206

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

60

V

1A

Pulsed Drain Current

8A

Gate-Source Voltage

± 20

V

2W

Operating and Storage Temperature Range

-55 to +150

°C

ZVN4206G

ZVN4206G

PARAMETER

SYMBOL MIN.

MAX.

UNIT CONDITIONS.

60

V

Gate-Source Threshold Voltage

1.3

3

V

I

D

Gate-Body Leakage

100

nA

Zero Gate Voltage Drain Current

10

100

µA

µA

On-State Drain Current (1)

3A

Static Drain-Source On-State

Resistance (1)

1

1.5

Ω

Ω

300

mS

Input Capacitance (2)

100

pF

Common Source Output

Capacitance (2)

60

pF

Reverse Transfer Capacitance (2)

20

pF

Turn-On Delay Time (2)(3)

8ns

Rise Time (2)(3)

12

ns

Turn-Off Delay Time (2)(3)

12

ns

Fall Time (2)(3)

15

ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

D

D

S

G

3 - 402

3 - 401