ZVP4525G

SEMICO NDUC TORS

ISSUE 4 - JUNE 2004

4

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

-285

V

Zero gate voltage drain current

-30

-500

nA

Gate-body leakage

±1

±100

nA

Gate-source threshold voltage

-0.8

-1.5

-2.0

V

I

D

Static drain-source on-state resistance

(1)

10

13

14

18

Ω

Ω

Forward transconductance

(3)

80

200

mS

DYNAMIC

(3)

Input capacitance

73

pF

f=1MHz

Output capacitance

12.8

pF

Reverse transfer capacitance

3.91

pF

SWITCHING

(2) (3)

Turn-on delay time

1.53

ns

(refer to test circuit)

Rise time

3.78

ns

Turn-off delay time

17.5

ns

Fall time

7.85

ns

Total gate charge

2.45

3.45

nC

test circuit)

Gate-source charge

0.22

0.31

nC

Gate drain charge

0.45

0.63

nC

SOURCE-DRAIN DIODE

Diode forward voltage

(1)

0.97

V

Reverse recovery time

(3)

205

290

ns

di/dt= 100A/

µs

Reverse recovery charge

(3)

21

29

nC

NOTES:

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.