ZVP4525G

SEMICO NDUC TORS

ISSUE 4 - JUNE 2004

2

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient

(a)

63

°C/W

Junction to ambient

(b)

26

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

250

V

Gate source voltage

±40

V

Continuous drain current

(a)

(a)

-265

-212

mA

mA

Pulsed drain current

(c)

-1

A

Continuous source current (body diode)

-0.75

A

Pulsed source current (body diode)

-1

A

(a)

Linear derating factor

2

16

W

mW/°C

Operating and storage temperature range

-55 to +150

°C

NB High voltage applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to

voltage spacing between conductors.