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ZX5T951GTC Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZX5T951GTC Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page ZX5T951G SEMICO NDUC TORS ISSUE 2 - SEPTEMBER 2003 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R JA 42 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO -100 V Collector-emitter voltage BVCEO -60 V Emitter-base voltage BVEBO -7 V Continuous collector current IC -5.5 A Peak pulse current ICM -15 A Power dissipation at TA =25°C (a) Linear derating factor PD 3.0 24 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.6 12.8 W mW/°C Operating and storage temperature range Tj,Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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