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RJH60F0DPK Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJH60F0DPK
Description  Silicon N Channel IGBT High Speed Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60F0DPK Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJH60F0DPK
Preliminary
R07DS0234EJ0200 Rev.2.00
Page 3 of 7
Dec 14, 2010
Main Characteristics
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25
0
25
75
125
50
100
150
Junction Temparature Tj (°C)
Typical Output Characteristics
100
80
60
40
20
12345
0
0
Collector to Emitter Voltage VCE (V)
100
80
60
40
20
0
Ta = 25°C
Pulse Test
Pulse Test
Ta = 25°C
10.5 V
V
GE = 8.5 V
9.5 V
9 V
15 V
13 V
10 V
11 V
1
2
3
5
4
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
25 A
15 A
IC = 50 A
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
02468
12
10
6
VCE = 10 V
Pulse Test
Gate to Emitter Voltage VGE (V)
25°C
–25
°C
Tc = 75
°C
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
0
2
4
8
6
10
−25
0
25
75
125
50
100
150
1.0
1.2
1.8
1.4
2.2
1.6
2.0
VCE = 10 V
Pulse Test
Junction Temparature Tj (°C)
1 mA
IC = 10 mA
Ta = 25°C
Pulse Test
VGE = 15 V
Pulse Test
810
12
18
16
14
20
IC = 15 A
25 A
50 A
Collector to Emitter Voltage VCE (V)
Maximum Safe Operation Area
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
Ta = 25
°C
1 shot
10
μs


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