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RJK0631JPD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK0631JPD
Description  Silicon N Channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0631JPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK0631JPD
Preliminary
R07DS0252EJ0100 Rev.1.00
Page 4 of 6
Feb 03, 2011
50
40
30
20
10
0
20
16
12
8
4
10
20
30
40
50
0
Tc = 25
°C
ID = 30 A
VDS
VDD = 25 V
10 V
5 V
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Tc = 25
°C
Pulse Test
VGS = 0, −5 V
10 V
100
80
60
40
20
25
50
75
100
125
175
150
0
50
−50
0
50
100
150
200
0
10
40
20
30
VGS = 4.5 V
10 V
0
5
10
15
20
25
30
3000
10000
1000
300
100
Tc = 25
°C
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VGS
VDD = 25 V
10 V
5 V
IAP = 27 A
VDD = 25 V
duty < 0.1 %
Rg
≥ 50 Ω
Gate Charge Qg (nc)
Dynamic Input Characteristics
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (
°C)
Avalanche Energy vs.
Channel Temperature Derating
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Pulse Test
ID = 15 A


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