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RJK0631JPD-00-J0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJK0631JPD-00-J0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page RJK0631JPD Preliminary R07DS0252EJ0100 Rev.1.00 Page 2 of 6 Feb 03, 2011 Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Gate to source leak current IGSS — — 10 A VGS = 20 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V — 12 15 m ID = 15 A, VGS = 10 V Note5 Static drain to source on state resistance RDS(on) — 15 20 m ID = 15 A, VGS = 4.5 V Note5 Input capacitance Ciss — 1350 — pF Output capacitance Coss — 360 — pF Reverse transfer capacitance Crss — 270 — pF VDS = 10V, VGS = 0, f = 1 MHz Total gate charge Qg — 32 — nC Gate to source charge Qgs — 3.6 — nC Gate to drain charge Qgd — 10 — nC VDD = 25 V, VGS = 10 V, ID = 30 A Turn-on delay time td(on) — 13 — ns Rise time tr — 15 — ns Turn-off delay time td(off) — 60 — ns Fall time tf — 15 — ns ID = 15 A, RL = 2 VGS = 10 V, RG = 4.7 Body-drain diode forward voltage VDF — 0.94 1.17 V IF = 30 A, VGS = 0 Note5 Body-drain diode reverse recovery time trr — 40 — ns IF = 30 A, VGS = 0 diF/dt = 100 A/s Note: 5. Pulse test |
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