RJK0631JPD-00-J0 datasheet(2/7 Pages) RENESAS

Part #	RJK0631JPD-00-J0

Description	Silicon N Channel Power MOS FET High Speed Power Switching

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

2 / 7 page

RJK0631JPD

Preliminary

R07DS0252EJ0100 Rev.1.00

Page 2 of 6

Feb 03, 2011

Electrical Characteristics

(Ta = 25

C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Gate to source leak current

IGSS

—

10

A

VGS = 20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

A

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

—

2.0

V

ID = 1 mA, VDS = 10 V

—

12

15

m



ID = 15 A, VGS = 10 V

Note5

Static drain to source on state

resistance

RDS(on)

—

15

20

m



ID = 15 A, VGS = 4.5 V

Note5

Input capacitance

Ciss

—

1350

—

pF

Output capacitance

Coss

—

360

—

pF

Reverse transfer capacitance

Crss

—

270

—

pF

VDS = 10V, VGS = 0,

f = 1 MHz

Total gate charge

Qg

—

32

—

nC

Gate to source charge

Qgs

—

3.6

—

nC

Gate to drain charge

Qgd

—

10

—

nC

VDD = 25 V, VGS = 10 V,

ID = 30 A

Turn-on delay time

td(on)

—

13

—

ns

Rise time

tr

—

15

—

ns

Turn-off delay time

td(off)

—

60

—

ns

Fall time

tf

—

15

—

ns

ID = 15 A, RL = 2 

VGS = 10 V, RG = 4.7 

Body-drain diode forward voltage

VDF

—

0.94

1.17

V

IF = 30 A, VGS = 0

Note5

Body-drain diode reverse recovery

time

trr

—

40

—

ns

IF = 30 A, VGS = 0

diF/dt = 100 A/s

Note:

5. Pulse test

Similar Part No. - RJK0631JPD-00-J0

Manufacturer	Part #	Datasheet	Description
SHENZHEN DOINGTER SEMIC...	RJK0631JPD	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
Renesas Technology Corp	RJK0631JPD	99Kb / 7P	Silicon N Channel Power MOS FET High Speed Power Switching
Renesas Technology Corp	RJK0631JPD	98Kb / 7P	Silicon N Channel Power MOS FET High Speed Power Switching

More results

Similar Description - RJK0631JPD-00-J0

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	HAT2026R	108Kb / 9P	Silicon N Channel Power MOS FET High Speed Power Switching
	HAT2058R	249Kb / 10P	Silicon N Channel Power MOS FET High Speed Power Switching
	RJK0631JPE	126Kb / 7P	Silicon N Channel Power MOS FET High Speed Power Switching
	HAT2058R	86Kb / 10P	Silicon N Channel Power MOS FET High Speed Power Switching
Hitachi Semiconductor	HAT2025R	51Kb / 9P	Silicon N Channel Power MOS FET High Speed Power Switching
	HAT2033R	56Kb / 10P	Silicon N Channel Power MOS FET High Speed Power Switching
	HAT2049T	52Kb / 9P	Silicon N Channel Power MOS FET High Speed Power Switching
	HAT2050T	57Kb / 9P	Silicon N Channel Power MOS FET High Speed Power Switching
Renesas Technology Corp	RJK0631JPD	99Kb / 7P	Silicon N Channel Power MOS FET High Speed Power Switching
	RJK0631JPE	101Kb / 7P	Silicon N Channel Power MOS FET High Speed Power Switching
	HAT2092R	80Kb / 8P	Silicon N Channel Power MOS FET High Speed Power Switching

More results

RJK0631JPD-00-J0 Datasheet(PDF) 2 Page - Renesas Technology Corp

RJK0631JPD-00-J0 Datasheet(HTML) 2 Page - Renesas Technology Corp

Similar Part No. - RJK0631JPD-00-J0

Similar Description - RJK0631JPD-00-J0

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL