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CEP01N65 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEP01N65 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 4 page 3 Ciss Coss Crss 300 250 200 150 100 50 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 0.2 0.6 1.0 1.4 10 -1 10 -2 10 0 2.2 1.8 VGS=0V 1.0 0.8 0.6 0.4 0.2 0 0.0 4 8 16 12 1.2 20 24 VGS=4V VGS=5V VGS=10,8,7V 2.0 1.6 1.2 0.8 0.4 0 1 2 3 4 2.4 5 6 7 TJ=125 C -55 C 25 C CEP01N65/CEB01N65 CEF01N65 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VGS=10V ID=0.6A -100 -50 0 50 100 150 200 |
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