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CEP630N Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEP630N Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 200 0.63 78 36 9 ±20 V W A A V W/ C 1 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP630N CEF630N 200V 200V 0.36Ω 0.36Ω 9A 9A d 10V 10V TO-220/263 TO-220F 0.27 33 36 d 9 d CEP630N/CEB630N CEF630N CEB630N Lead free product is acquired. 200V 0.36Ω 9A 10V http://www.cetsemi.com Details are subject to change without notice . Rev 3. 2008.Oct. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.6 RθJC RθJA 3.7 65 |
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