TK25A10K3

2009-03-23

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)

TK25A10K3

Swiching Regulator Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

100

V

100

V

Gate-source voltage

±20

V

DC

(Note 1)

25

Drain current

Pulse

(Note 1)

50

A

Drain power dissipation (Tc

= 25°C)

25

W

Single pulse avalanche energy

(Note 2)

39

mJ

Avalanche current

25

A

Repetitive avalanche energy (Note 3)

1.72

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease

in

the

reliability

significantly

even

if

the

operating

conditions

(i.e.

operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 3: Repetitive rating; pulse width limited by maximum channel temperature.

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

5.0

°C / W

Thermal resistance, channel to

ambient

62.5

°C / W

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

1: Gate

2: Drain

3: Source

JEDEC

⎯

JEITA

SC-67

TOSHIBA

2-10U1B

Weight: 1.7 g (typ.)

1

3

2