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TK40A10K3 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TK40A10K3 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page TK40A10K3 2009-09-29 5 1000 0.1 1 100 0.01 10 10 μ 100 μ 1m 10m 100m 1 10 0.001 0.1 1 10 Duty = 0.5 0.2 0.1 0.05 0.02 0.01 PDM Duty = t/T Rth (ch-c) = 3.125°C/W T t 0.01 RG = 1 Ω VDD = 50 V, L = 100 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit Wave form IAR BVDSS VDD VDS 0 V 20 V EAS – Tch Channel temperature (initial) Tch (°C) rth – tw Pulse width tw (s) SINGLE PULSE 100 μs * 1 ms * 0.1 10 VDSS max 1 1000 100 ※ Single pulse Tc=25℃ Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPEATION Tc = 25°C SAFE OPERATING AREA Drain-source voltage VDS (V) 160 120 40 0 25 50 75 100 125 150 200 80 |
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