2SD1508

2009-12-21

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)

2SD1508

Pulse Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

Collector-emitter voltage

30

V

Emitter-base voltage

10

V

DC

1.5

Collector current

Pulse

3.0

A

Base current

50

mA

Ta = 25°C

1.2

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8H1A

Weight: 0.82 g (typ.)

BASE

EMITTER

COLLECTOR