2SD1662 datasheet(3/4 Pages) TOSHIBA

Part #	2SD1662

Description	High Current Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SD1662

2006-11-21

3

Collector-emitter voltage VCE (V)

IC – VCE

hFE – IC

Collector current IC (A)

VCE (sat) – IC

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

VBE (sat) – IC

0

8

16

2

4

6

8

IB = 1.5 mA

2

0

Common emitter

Tc = 25°C

10

4

12

2.5

3

3.5

4

4.5

5

10000

0.1

200

500

1000

3000

5000

0.3

1

3

10

30

Tc = 100°C

25

−55

Common emitter

VCE = 3 V

0.5

0.1

10

Tc = −55°C

100

25

Common emitter

IC/IB = 500

1

10

0.3

3

30

0.1

0.3

3

5

0

8

12

0.4

0.8

1.6

2.4

Common emitter

VCE = 3 V

Tc = 100°C

25

−55

1.2

2.0

4

16

0.5

0.1

10

Tc = −55°C

100

25

Common emitter

IC/IB = 500

1

10

0.3

3

30

0.1

0.3

3

5

10

30

100

300

0.05

3

30

0.5

1

3

5

10

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated linearly

with increase in temperature.

IC max

(continuous)

IC max (pulsed)*

VCEO max

1 ms*

10 ms*

100 μs*

DC operation

Tc = 25°C

0.1

0.3

3 ms*

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