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2SD2079 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SD2079 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD2079 2006-11-21 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 2.5 mA Collector-emitter breakdown voltage V (BR) CEO IC = 30 mA, IB = 0 100 ― ― V hFE (1) VCE = 3 V, IC = 3 A 2000 ― 15000 DC current gain hFE (2) VCE = 3 V, IC = 5 A 1000 ― ― VCE (sat) (1) IC = 3 A, IB = 6 mA ― 1.1 1.5 Collector-emitter saturation voltage VCE (sat) (2) IC = 5 A, IB = 20 mA ― 1.3 2.5 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 6 mA ― 1.7 2.5 V Turn-on time ton ― 1.0 ― Storage time tstg ― 4.0 ― Switching time Fall time tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% ― 2.5 ― μs Marking 20 μs Input VCC ≈ 30 V IB1 IB2 Output Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. D2079 Part No. (or abbreviation code) |
Similar Part No. - 2SD2079_06 |
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Similar Description - 2SD2079_06 |
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