2SD2079_06 datasheet(2/5 Pages) TOSHIBA

Part #	2SD2079

Description	High-Power Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SD2079

2006-11-21

2

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

―

2.5

mA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 30 mA, IB = 0

100

―

V

hFE (1)

VCE = 3 V, IC = 3 A

2000

―

15000

DC current gain

hFE (2)

VCE = 3 V, IC = 5 A

1000

―

VCE (sat) (1) IC = 3 A, IB = 6 mA

―

1.1

1.5

Collector-emitter saturation voltage

VCE (sat) (2) IC = 5 A, IB = 20 mA

―

1.3

2.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 3 A, IB = 6 mA

―

1.7

2.5

V

Turn-on time

ton

―

1.0

―

Storage time

tstg

―

4.0

―

Switching time

Fall time

tf

IB1 = −IB2 = 6 mA, duty cycle ≤ 1%

―

2.5

―

μs

Marking

20 μs

Input

VCC ≈ 30 V

IB1

IB2

Output

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

D2079

Part No. (or abbreviation code)

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