2SJ313

2009-09-29

2

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

―

―

±100

nA

Drain−source breakdown voltage

−180

―

―

V

Gate−source cut−off voltage (Note 2)

−0.8

―

−2.8

V

Drain−source saturation voltage

―

−1.2

−3.0

V

Forward transfer admittance

―

0.7

―

S

Input capacitance

―

210

―

Output capacitance

―

90

―

Reverse transfer capacitance

―

45

―

pF

Note 1: Ensure that the channel temperature does not exceed 150°C.

O: −0.8~−1.6,

Y: −1.4~−2.8

This transistor is the electrostatic-sensitive device.

Please handle with caution.

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

Lot No.

Note 3

J313

Part No. (or abbreviation code)