CMKSH-3DO

SURFACE MOUNT

DUAL OPPOSING SILICON

SCHOTTKY DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKSH-3DO

incorporates two (2) galvanically isolated, Low VF

Silicon Diodes with an opposing Anode/Cathode

configuration, in a space saving surface mount

package, designed for fast switching applications

requiring a low forward voltage drop.

MARKING CODE: KDO

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

30

V

Continuous Forward Current

IF

100

mA

Power Dissipation

PD

250

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=25V

500

nA

IR

VR=25V, TA=100°C

100

μA

BVR

IR=100μA

30

V

VF

IF=2.0mA

0.33

V

VF

IF=15mA

0.45

V

VF

IF=100mA

0.58

1.00

V

CT

VR=0, f=1.0MHz

7.0

pF

trr

IF=IR=10mA, Irr=1.0mA, RL=100Ω

5.0

ns

FEATURES:

• Dual Opposing (DO) Schottky Diodes

• Galvanically Isolated

• Small ULTRAmini™ SOT-363 Package

• Low Forward Voltage (0.58V TYP @ 100mA)

SOT-363 CASE

R4 (13-January 2010)

www.centra lsemi.com