CMPD2005S

CMPD2005SG*

SURFACE MOUNT

DUAL, IN SERIES

HIGH VOLTAGE

SILICON SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD2005S

and CMPD2005SG each contain two (2) High Voltage

Silicon Switching Diodes, manufactured by the epitaxial

planar process, epoxy molded in a SOT-23 surface

mount package, designed for applications requiring

high voltage capability.

MARKING CODES:

CMPD2005S:

DB5

CMPD2005SG*: 5SG

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

300

V

Peak Repetitive Reverse Voltage

VRRM

350

V

Average Forward Current

IO

200

mA

Continuous Forward Current

IF

225

mA

Peak Repetitive Forward Current

IFRM

625

mA

Peak Forward Surge Current, tp=1.0μs

IFSM

4.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=280V

100

nA

IR

VR=280V, TA=150°C

100

μA

BVR

IR=100μA

350

V

VF

IF=20mA

0.87

V

VF

IF=100mA

1.0

V

VF

IF=200mA

1.25

V

CT

VR=0, f=1.0MHz

5.0

pF

trr

IR=IF=30mA, Rec. to 3.0mA, RL=100Ω

50

ns

* Device is Halogen Free by design

SOT-23 CASE

R3 (25-January 2010)

www.centra lsemi.com