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CMPF4391 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPF4391 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CMPF4391 CMPF4392 CMPF4393 SURFACE MOUNT N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF4391 series types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications. MARKING CODE: CMPF4391: 6J CMPF4392: 6K CMPF4393: 6G MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Gate Voltage VGD 40 V Gate-Source Voltage VGS 40 V Drain-Source Voltage VDS 40 V Gate Current IG 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPF4391 CMPF4392 CMPF4393 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS IGSS VGS=20V - 0.1 - 0.1 - 0.1 nA IGSS VGS=20V, TA=100°C - 0.2 - 0.2 - 0.2 µA IDSS VDS=20V 50 150 25 75 5.0 30 mA ID(OFF) VDS=20V, VGS=12V - 0.1 - - - - nA ID(OFF) VDS=20V, VGS=7.0V - - - 0.1 - - nA ID(OFF) VDS=20V, VGS=5.0V - - - - - 0.1 nA ID(OFF) VDS=20V, VGS=12V, TA=100°C - 0.2 - - - - µA ID(OFF) VDS=20V, VGS=7.0V, TA=100°C - - - 0.2 - - µA ID(OFF) VDS=20V, VGS=5.0V, TA=100°C - - - - - 0.2 µA BVGSS IG=1.0µA 40 - 40 40 - V VGS(OFF) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 0.5 3.0 V VGS(f) IG=1.0mA - 1.0 - 1.0 - 1.0 V VDS(ON) ID=12mA - 0.4 - - - - V VDS(ON) ID=6.0mA - - - 0.4 - - V VDS(ON) ID=3.0mA - - - - - 0.4 V rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 - 100 Ω rds(ON) VGS=0, ID=0, f=1.0kHz - 30 - 60 - 100 Ω Ciss VDS=20V, VGS=0, f=1.0MHz - 14 - 14 - 14 pF SOT-23 CASE R5 (27-January 2010) www.centra lsemi.com |
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