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SPD06N60C3 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SPD06N60C3 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 11 page SPD06N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD parameter: T j 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=3.1 A; V DD=50 V parameter: T j(start) 120 V 480 V 0 2 4 6 8 10 12 010 20 30 Q gate [nC] 0 50 100 150 200 250 20 60 100 140 180 T j [°C] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 V SD [V] 125 °C 25 °C 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 2 4 6 8 t AR [µs] Rev. 1. 5 Page 7 200 8-04-11 |
Similar Part No. - SPD06N60C3_08 |
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Similar Description - SPD06N60C3_08 |
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