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CMUDM8004 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMUDM8004 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  MAXIMUM RATING: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 8.0 V Continuous Drain Current ID 450 mA Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=8.0V, VDS=0 3.0 μA IDSS VDS=30V, VGS=0 1.0 μA BVDSS VGS=0, ID=100μA 30 V VGS(th) VDS=VGS, ID=250μA 0.5 1.0 V VSD VGS=0, IS=100mA 1.1 V rDS(ON) VGS=4.5V, ID=430mA 1.1 Ω rDS(ON) VGS=2.5V, ID=200mA 2.0 Ω rDS(ON) VGS=1.8V, ID=100mA 3.3 Ω Qg(tot) VDS=10V, VGS=4.5V, ID=1.0A 0.880 nC Qgs VDS=10V, VGS=4.5V, ID=1.0A 0.384 nC Qgd VDS=10V, VGS=4.5V, ID=1.0A 0.128 nC gFS VDS =10V, ID=100mA 200 mS Crss VDS=25V, VGS=0, f=1.0MHz 10 pF Ciss VDS=25V, VGS=0, f=1.0MHz 55 pF Coss VDS=25V, VGS=0, f=1.0MHz 15 pF CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8004 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: 84C FEATURES: • ESD Protection up to 2kV • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-523 Surface Mount Package • Complimentary N-Channel MOSFET: CMUDM7004 APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices • Devices are Halogen Free by design SOT-523 CASE R1 (7-December 2010) www.centra lsemi.com |
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