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LC78711E Datasheet(PDF) 6 Page - Sanyo Semicon Device |
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LC78711E Datasheet(HTML) 6 Page - Sanyo Semicon Device |
6 / 43 page No. 5476-6/43 LC78711E Continued from preceding page. Pin no. Pin Pin type I/O Polarity Pin function 51 TEST12 Test input I Positive Test input. Must be connected to ground during normal operation. 52 PALID PAL mode external control input I Positive External superimpose function control input for PAL mode (A pull-up resistor is built in.) 53 HRESET External horizontal I Negative External horizontal synchronization timing control input synchronization input Subcarrier clock output 54 FSCO Clock output O Positive NTSC mode: 3.579545 MHz PAL mode: 4.433619 MHz 55 VRESET External vertical I Negative External vertical synchronization timing control input synchronization input 56 INIT Initialization input I Negative System initialization signal input 57 RESET Reset input I Negative System reset signal input 58 N/P1 NTSC/PAL selection I Positive NTSC/PAL selection input (RGB encoder block) High: NTSC, low: PAL 59 N/P2 NTSC/PAL selection I Positive NTSC/PAL selection input (decoder block) High: NTSC, low: PAL 60 SON Superimpose control I Positive Superimpose function on/off control input High: superimpose on 61 XIN2 Crystal oscillator element I — Connections for the PAL crystal oscillator element 62 XOUT2 connections O — (4·fsc = 17.734476 MHz) 63 XIN1 Crystal oscillator element I — Connections for the NTSC crystal oscillator element 64 XOUT1 connections O — (4·fsc = 14.31818 MHz) Parameter Symbol Conditions Ratings Unit min typ max Random read/write cycle tRC 250 ns Page mode cycle tPC 130 ns RAS access time tRAC 210 ns CAS access time tCAC 10 ns Output turn off delay tOFF 20 ns RAS precharge time tRP 100 ns RAS pulse width tRAS 120 ns RAS pulse width (page mode) tRASP 18000 ns RAS hold time tRSH 60 ns CAS hold time tCSH 120 ns CAS pulse width tCAS 60 ns CAS precharge time tCPN 50 ns CAS precharge time tCP Page mode 50 ns Row address setup time tASR 100 ns Row address hold time tRAH 50 ns Column address setup time tASC 0 ns Column address hold time tCAH 50 ns Read command setup time tRCS 150 ns Read command hold time tRCH Referenced to CAS 120 ns Read command hold time tRRH Referenced to RAS 120 ns Write command setup time tWCS 100 ns Write command hold time tWCH 50 ns Write command pulse width tWP 150 ns Write data setup time tDS 100 ns Write data setup time tDH 100 ns CAS setup time tCSR CAS before RAS 50 ns CAS hold time tCHR CAS before RAS 50 ns RAS precharge CAS active time tRPC 50 ns Refresh time tREF 3.5 ms Timing Characteristics (DRAM access timing) at Ta = +25°C, DVDD1 = 5 V |
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