CMXD4448

SURFACE MOUNT

TRIPLE ISOLATED

HIGH SPEED

SILICON SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXD4448

type contains three (3) Isolated High Speed Silicon

Switching Diodes, manufactured by the epitaxial planar

process, epoxy molded in a SUPERmini™ surface

mount package, and designed for applications requiring

high speed switching.

MARKING CODE: X48

SOT-26 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

75

V

Peak Repetitive Reverse Voltage

VRRM

100

V

Continuous Forward Current

IF

250

mA

Peak Repetitive Forward Current

IFRM

500

mA

Peak Forward Surge Current, tp=1.0μs

IFSM

4.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=20V

25

nA

BVR

IR=5.0μA

75

V

BVR

IR=100μA

100

V

VF

IF=100mA

1.0

V

CT

VR=0, f=1.0MHz

4.0

pF

trr

IR=IF=10mA, Irr=1.0mA, RL=100Ω

4.0

ns

R5 (12-February 2010)

www.centra lsemi.com