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CMXD4448 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMXD4448 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CMXD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD4448 type contains three (3) Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for applications requiring high speed switching. MARKING CODE: X48 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 75 V Peak Repetitive Reverse Voltage VRRM 100 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current IFRM 500 mA Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A Peak Forward Surge Current, tp=1.0s IFSM 1.0 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=20V 25 nA BVR IR=5.0μA 75 V BVR IR=100μA 100 V VF IF=100mA 1.0 V CT VR=0, f=1.0MHz 4.0 pF trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 4.0 ns R5 (12-February 2010) www.centra lsemi.com |
Similar Part No. - CMXD4448_10 |
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Similar Description - CMXD4448_10 |
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