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CP207 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP207 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES 2N2369A CMPT2369 GROSS DIE PER 4 INCH WAFER 93,430 PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 2.7 x 2.7 MILS Emitter Bonding Pad Area 2.7 x 2.7 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 6,000Å BACKSIDE COLLECTOR www.centr a lsemi.com R4 (22-March 2010) |
Similar Part No. - CP207_10 |
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Similar Description - CP207_10 |
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