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LC79400D Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LC79400D Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 8 page  LC79400D No. 4346-2/8 Allowable Operating Ranges at Ta = –20 to +75°C, VSS = 0 V Note:2. The voltages V1, V3, V4, V7, VDD and VEE must obey the relationships: VDD ≥ V1 > V3 > V4 > VEE, VDD – V3 ≤ 7V, V4 – VEE ≤ 7V. 3. When applying power, apply power to the LCD drive block after applying power to the logic block or apply power to both the blocks simultaneously. When turning off power, turn off power to the logic block after turning off power to the LCD drive block or turn off power to both the blocks simultaneously. Electrical Characteristics at Ta = 25±2°C, VSS = 0 V, VDD = 5 V±10% Note:4. VDE = V1 or V3 or V4 or VEE, V1 = VDD, V3 = 15/17 (VDD-VEE), V4 = 2/17 (VDD-VEE) 5. ISS current flows from VDD to VSS. 6. IEE current flows from VDD to VEE. Switching Characteristics at Ta = 25±2°C, VSS = 0 V, VDD = 5 V±10% Parameter Symbol Conditions min typ max Unit Supply voltage (logic) VDD 4.5 5.5 V Supply voltage (LCD) VDD - VEE * 2 , *3 12 32 V Input high-level voltage VIH DI1 to 4, CP, LOAD, CDR, CDL 0.8 VDD V R/L, M, DISP OFF Input low-level voltage VIL DI1 to 4, CP, LOAD, CDR, CDL 0.2 VDD V R/L, M, DISP OFF CP (shift clock) fCP CP 3.0 MHz CP (pulse width) fWC CP 100 ns LOAD pulse width tWL LOAD 100 ns Setup time tSETUP DI1 to 4 → CP 80 ns Hold time tHOLD DI1 to 4 → CP 80 ns CP → LOAD tCL1 CP → LOAD 0 ns tCL2 CP → LOAD 100 ns LOAD → CP tLC LOAD → CP 63 ns tR CP 50 ns Rise/Fall time tF CP 50 ns tRL LOAD 50 ns tFL LOAD 50 ns Parameter Symbol Conditions min typ max Unit Input high-level current IIH VIN = VDD; LOAD, CP, CDR (CDL), 1 µA R/L, DI1 to DI4, M, DISP OFF Input low-level current IIL VIN = VSS; LOAD, CP, CDR (CDL), –1 µA R/L, DI1 to DI4, M, DISP OFF Output high-level voltage VOH IOH = –400 µA; CDL (CDR) VDD – 0.4 V Output low-level voltage VOL IOL = 400 µA; CDL (CDR) 0.4 V RON1 VDD – VEE = 30 V, VDE – VO = 0.5 V*4; 1.5 3.0 k Ω Driver on resistor O1 to O80 RON2 VDD – VEE = 20 V, VDE – VO = 0.5 V*4; 2.0 3.5 k Ω O1 to O80 Standby current dissipation IST CDR (CDL) = VDD, VDD – VEE = 30 V 200 µA CP = 3.0 MHz, no-load output: VSS ISS*5 VDD – VEE = 30 V, CP = 3 MHz, 4.0 mA Operation current dissipation LOAD = 14 kHz, M = 35 Hz; VSS ISS*6 VDD – VEE = 30 V, CP = 3 MHz, 0.1 mA LOAD = 14 kHz, M = 35 Hz; VEE Input capacity CI f = 3.0 MHz; CP 5 pF Parameter Symbol Conditions min typ max Unit Output delay time tD Load = 15 pF; CDR (CDL) 200 ns |
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