CSD-8M

CSD-8N

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

8 AMP, 600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSD-8M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CSD-8M

CSD-8N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

8.0

A

Peak One Cycle Surge, t=10ms

ITSM

80

A

32

Peak Gate Power, tp=10μs

PGM

40

W

Average Gate Power Dissipation

PG(AV)

1.0

W

Peak Forward Gate Current, tp=10μs

IFGM

4.0

A

Peak Forward Gate Voltage, tp=10μs

VFGM

16

V

Peak Reverse Gate Voltage, tp=10μs

VRGM

5.0

V

Critical Rate of Rise of On-State Current

di/dt

50

A/μs

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM

10

μA

IDRM, IRRM

Rated VDRM, VRRM, TC=125°C

2.0

mA

IGT

VD=12V, RL=10Ω

3.0

15

mA

IH

IT=100mA

7.3

20

mA

VGT

VD=12V, RL=10Ω

0.9

1.5

V

VTM

ITM=16A, tp=380μs

1.3

1.8

V

dv/dt

200

V/μs

DPAK THYRISTOR CASE

R1 (17-February 2010)

www.centra lsemi.com