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CXT3150 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CXT3150 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CXT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 5.0 A Continuous Base Current IB 1.0 A Power Dissipation PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=50V 1.0 µA IEBO VEB=7.0V 1.0 µA BVCEO IC=10mA 25 V VCE(SAT) IC=3.0A, IB=150mA 0.5 V VCE(SAT) IC=4.0A, IB=200mA 0.6 V VBE(SAT) IC=3.0A, IB=150mA 1.10 V VBE(SAT) IC=4.0A, IB=200mA 1.40 V hFE VBE=2.0V, IC=500mA 250 550 hFE VCE=2.0V, IC=2.0A 150 hFE VCE=2.0V, IC=5.0A 50 fT VCE=6.0V, IC=50mA, f=200MHz 150 MHz Cob VCB=10V, IE=0, f=1.0MHz 50 pF SOT-89 CASE R6 (23-February 2010) www.centra lsemi.com |
Similar Part No. - CXT3150_10 |
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Similar Description - CXT3150_10 |
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