2SC3648

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-038,C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

180

V

Collector to Emitter Voltage

160

V

Emitter to Base Voltage

6

V

Collector Current

0.7

A

Collector Current (Pulse)

1.5

A

Collector Dissipation

500

mW

Junction Temperature

150

°C

Storage Temperature

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

180

V

Collector-Emitter Breakdown Voltage

160

V

Emitter-Base Breakdown Voltage

6

V

Collector Cutoff Current

0.1

μA

Emitter Cutoff Current

0.1

μA

Collector-Emitter Saturation Voltage

0.12 0.4

V

Base-Emitter Saturation Voltage

0.85 1.2

V

Output Capacitance

Cob

8

pF

100

400

DC Current Gain

90

Turn-on Time

See specified Test circuit

50

ns

Storage Time

See specified Test circuit

1000

ns

Fall Time

See specified Test circuit

60

ns

Gain-Bandwidth Product

120

MHz

RANK

R

S

T

RANGE

100 ~ 200

140 ~ 280

200 ~ 400