2SD1803

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-014,E

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

6

V

DC

5

Collector Current

PULSE

8

A

1

Power Dissipation

20

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

60

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

6

V

Collector Cutoff Current

1

μA

Emitter Cutoff Current

1

μA

70

400

DC Current Gain

35

C-E Saturation Voltage

220

400

mV

B-E Saturation Voltage

0.95

1.3

V

Gain-Bandwidth Product

180

MHz

Output Capacitance

40

pF

Turn-on Time

See Test Circuit

50

ns

Storage Time

See Test Circuit

500

ns

Fall Time

See Test Circuit

20

ns

RANK

Q

R

S

T

RANGE

70 ~ 140

100 ~ 200

140 ~ 280

200 ~ 400