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CMM1100-BD Datasheet(PDF) 1 Page - Mimix Broadband |
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CMM1100-BD Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 9 page 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier Page 1 of 9 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 General Description Parameter Units GHz dB dB dB dB dB dB dBm dBm dBm VDC mA Min. 2.0 6.0 8.0 14.0 - - - +13.0 - - - 90 Typ. - 9.0 17.0 17.0 +/-0.5 40.0 3.5 +16.0 +33.0 +26.0 +5.0 100 Max. 18.0 - - - - - 5.0 - - - +7.0 120 Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +8.0 VDC 180 mA +10 dBm -65 to +165 ºC -55 to +85 ºC +175 ºC Chip Device Layout (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.5 dB across the band.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. Electrical Characteristics (AmbientTemperature T = 25 oC) Absolute Maximum Ratings Frequency Range (f) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) Output Second Order Intercept Point (OIP2) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd1,2) Supply Current (Id) (Vd1,2=5.0V) CMM1100-BD February 2010 - Rev-05-Feb-10 100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant with an 80% pass rate required. |
Similar Part No. - CMM1100-BD_10 |
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Similar Description - CMM1100-BD_10 |
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