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FAN3223T Datasheet(PDF) 8 Page - Fairchild Semiconductor

Part # FAN3223T
Description  Application Review and Comparative Evaluation of Low-Side Gate Drivers
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FAN3223T Datasheet(HTML) 8 Page - Fairchild Semiconductor

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AN-6069
APPLICATION NOTE
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.0.3 • 1/6/10
8
Figure 17. Compound Driver Output Stage
For compound drivers, the output current is often specified
with the output voltage at a specified voltage, such as VDD/2,
to highlight the current that is available during the Miller
plateau region of the VGS waveform. In tests performed
using the methods described in section “Evaluating Drivers
on the Bench” below, the peak output current is generally
higher than the current specified at VDD/2. Figure 18 shows
the sink current capability of a 4A compound driver
(FAN3224C) to be 4.76A, while the output is at 6.1V after
reaching a peak just under 6A. A compound driver rated at
4A might deliver a higher peak current than a comparably
rated PMOS/NMOS driver. This type of information is
practically impossible to obtain from the driver datasheets,
so specific test methods are required.
IOUT at 2A/div
VOUT at 5V/div
INPUT at 10V/div
Time = 200ns/div
Figure 18. Compound Driver Current Sink Waveform
Evaluating Drivers on the Bench
Real-world driver comparisons are difficult to perform in the
lab because the fast signal ramp rates cause complex
interactions between the inductive and capacitive circuit
components. These fast edge rates can introduce overshoots
and undershoots of several volts. Some examples to help
quantify this effect in power circuits can be found in
reference [5]. Although the parasitic inductance varies
according to specific circuit layout and ground structure,
reference [6] gives an approximate value of 10nH/inch
(4nH/cm) for microstrip on FR-4 with the trace exposed to
air on one side. This provides an estimate that can be used
with the circuit capacitance to calculate a damping resistor
when needed.
It is difficult to compare competing devices using only
datasheets, which offer information produced using different
test conditions. Competing technologies used in integrated
circuit solutions further complicate device comparison. In
the following paragraphs, several circuits that can be used to
test and compare drivers on the bench are presented.
Figure 19 shows a circuit that can be used to test the pulsed
current source capability of a driver by clamping VOUT to a
level equal to VDSCH + VDZEN when the output is high. To
minimize power dissipation, the input is driven with a 200ns
positive-going pulse (for non-inverting driver) with a 2%
duty cycle. In this circuit, the positive-going voltage across
RCS is used to monitor the current sourced out of the driver.
To change the value of the output clamping voltage, the
voltage rating of DZEN must be changed.
VDD
RCS
VPULSE
DZEN
DSCH
VCS
+
-
CBYP
VOUT
Figure 19. Current Source Test Circuit with
Clamped VOUT
Figure 20 shows a circuit used to test the pulsed current sink
capability of a driver with the output voltage clamped at a
level VADJ-VDSCH. Here, the input is driven with a 200ns
negative-going pulse (for a non-inverting driver) with a 2%
duty cycle. In this circuit, the negative-going voltage across
RCS is used to monitor the current that the driver is sinking.
Figure 20. Current Sink Test Circuit with Clamped VOUT


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