IXYS reserves the right to change limits, test conditions, and dimensions.

FMM60-02TF

Ref: IXYS CO 0077 R0

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Characteristic Values

(T

Min.

Typ.

Max.

BV

DSS

V

200

V

V

GS(th)

V

2.5

4.5

V

I

GSS

V

± 200 nA

I

DSS

V

5

μA

V

T

250

μA

R

DS(on)

V

32

40 m

Ω

g

fs

V

40

62

S

C

iss

3700

pF

C

oss

V

520

pF

C

rss

37

pF

t

d(on)

Resistive Switching Times

39

ns

t

r

V

V

46

ns

t

d(off)

R

75

ns

t

f

42

ns

Q

g(on)

90

nC

Q

gs

V

V

33

nC

Q

gd

21

nC

R

thJC

1.0

°C/W

R

thCS

0.15

°C/W

Source-Drain Diode

Characteristic Values

T

Symbol

Min.

Typ.

Max.

I

S

V

33

A

I

SM

Repetitive, pulse width limited by T

JM

150

A

V

SD

I

1.5

V

t

rr

82

ns

I

RM

15.3

A

Q

RM

0.63

μC

Note 1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2 %.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experience,

and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

I

V