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FSQ0565RQLDTU Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FSQ0565RQLDTU Datasheet(HTML) 6 Page - Fairchild Semiconductor |
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6 / 23 page  © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0565RS/RQ Rev. 1.0.3 6 Electrical Characteristics TA = 25°C unless otherwise specified. Continued on the following page... Symbol Parameter Condition Min. Typ. Max. Unit SENSEFET SECTION BVDSS Drain Source Breakdown Voltage VCC = 0V, ID = 100µA 650 V IDSS Zero-Gate-Voltage Drain Current VDS = 560V 300 µA RDS(ON) Drain-Source On-State Resistance TJ = 25°C, ID = 0.5A 1.76 2.20 Ω COSS Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz 78 pF td(on) Turn-On Delay Time VDD = 350V, ID = 25mA 22 ns tr Rise Time VDD = 350V, ID = 25mA 52 ns td(off) Turn-Off Delay Time VDD = 350V, ID = 25mA 95 ns tf Fall Time VDD = 350V, ID = 25mA 50 ns CONTROL SECTION tON.MAX Maximum On Time TJ = 25°C 8.8 10.0 11.2 µs tB Blanking Time TJ = 25°C, Vsync = 5V 13.5 15.0 16.5 µs tW Detection Time Window TJ = 25°C, Vsync = 0V 6.0 µs fS Initial Switching Frequency 59.6 66.7 75.8 kHz ΔfS Switching Frequency Variation(11) -25°C < TJ < 85°C ±5 ±10 % tAVS AVS Triggering Threshold(11) On Time at VIN = 240VDC, Lm = 360μH (AVS triggered when VAVS > spec. and tAVS < spec.) 4.0 µs VAVS Feedback Voltage 1.2 V tSW Switching Time Variance by AVS(11) Sync = 500kHz sine input VFB = 1.2V, tON = 4.0µs 13.5 20.5 µs IFB Feedback Source Current VFB = 0V 700 900 1100 µA DMIN Minimum Duty Cycle VFB = 0V 0 % VSTART UVLO Threshold Voltage 11 12 13 V VSTOP After turn-on 7 8 9 V tS/S Internal Soft-Start Time With free-running frequency 17.5 ms VOVP Over-Voltage Protection (FSQ0565RS) 18 19 20 V VOVP Over-Voltage Protection (FSQ0565RQ) Threshold Voltage VCC = 15V, VFB = 2V 7.4 8 9.6 V tOVP Blanking Time(11) 1.0 1.7 2.4 µs BURST-MODE SECTION VBURH Burst-Mode Voltages TJ = 25°C, tPD = 200ns(10) 0.45 0.55 0.65 V VBURL 0.25 0.35 0.45 V Hysteresis 200 mV |
Similar Part No. - FSQ0565RQLDTU |
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Similar Description - FSQ0565RQLDTU |
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