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STK301-220 Datasheet(PDF) 6 Page - Sanyo Semicon Device |
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STK301-220 Datasheet(HTML) 6 Page - Sanyo Semicon Device |
6 / 8 page No. 4793-6/8 STK301-220 3. Flat When the volume control is set to the midrange position and Ri=RNF, the following relationships are established: ei' = R/2 · ei Ri = R/2 AV = RNF + R/2 R/2 in which eo = AV·ei' = ei with no relation to the resonance circuit and frequency characteristics become flat. When VR is set to R, the resistance value using the VR center position becomes R/2. 4. Boost When the volume control is set to the boost position, the resonance circuit is linked to the NF loop of the output buffer amplifier. Under these circumstances and when R»Ri and RNF, the following relationship exist: AV = RNF + Z Z is established and output voltage eo is calculated as eo = AV·ei = RNF + Z · ei Z The gain becomes a minimum when the resonance circuit has Z at a minimum so that the frequency option is boosted. 5. Cut When volume is set to the cut side, resonance circuit is linked to the input side of the output buffer amplifier. Under these circumstances and when ignoring R similarly to boost, the following relationship exist: ei' = Z · ei, AV = 1 Ri+Z is established and output voltage eo is calculated as eo = AV·ei' = Z · ei Ri+Z The gain becomes a minimum when the resonance circuit has Z at a minimum so that the frequency option is cut. 6. Resonance Circuit Crest Acuteness (Q) Resonance circuit crest acuteness is determined by comparing frequency widths ω2 - ω1 for G V max/√2 where GV max represents point ω0 as the maximum value of the resonance circuit crest. The following formula is used to calculate the value for Q: Q = As the value for Q becomes larger, the participating frequency bandwidth of the resonance circuit becomes narrower. Although neighboring bands distinction is precise, the swell of frequency characteristics under total boost is larger while the peak of the resultant frequency is lowered. C1 · R2 C2 · R1 |
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