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BF998 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BF998 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page 2007-04-20 1 BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R SOT143 SOT143R 1=S 1=D 2=D 2=S 3=G2 3=G1 4=G1 4=G2 - - - - MOs MRs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 12 V Continuous drain current ID 30 mA Gate 1/ gate 2-source current ±I G1/2SM 10 Total power dissipation TS ≤ 76 °C, BF998, BF998R Ptot 200 Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point2), BF998, BF998R Rthchs ≤ 370 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
Similar Part No. - BF998_07 |
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Similar Description - BF998_07 |
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