BFN38 datasheet(2/6 Pages) INFINEON

Part #	BFN38

Description	NPN Silicon High-Voltage Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 6 page

2007-03-29

2

BFN38

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 300

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0

V(BR)CBO 300

-

Emitter-base breakdown voltage

IE = 100 µA, IC = 0

V(BR)EBO

6

-

Collector-base cutoff current

VCB = 250 V, IE = 0

VCB = 250 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

20

µA

Emitter-base cutoff current

VEB = 5 V, IC = 0

IEBO

-

100

nA

DC current gain1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

hFE

25

40

30

-

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

VCEsat

-

0.5

V

Base emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

VBEsat

-

0.9

AC Characteristics

Transition frequency

IC = 20 MHz, VCE = 10 V, f = 20 MHz

fT

-

70

-

MHz

Collector-base capacitance

VCB = 30 V, f = 1 MHz

Ccb

-

1.5

-

pF

1Pulse test: t < 300µs; D < 2%

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