BFP650_10 datasheet(10/27 Pages) INFINEON

Part #	BFP650

Description	High Linearity Low Noise SiGe:C NPN RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFP650

Electrical Characteristics

Data Sheet

10

Revision 1.0, 2010-10-22

4

Electrical Characteristics

4.1

DC Characteristics

4.2

General AC Characteristics

Table 3

DC Characteristics at

T

A =25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Collector emitter breakdown voltage

V

(BR)CEO

44.5

–V

I

C =3mA, IB =0

Open base

Collector emitter leakage current

I

CES

––100

µA

V

CE =13V, VBE =0

–140

nA

V

CE =5 V, VBE =0

Emitter/base shortened

Collector base leakage current

I

CBO

–140

nA

V

CB =5 V, IE =0

Open emitter

Emitter base leakage current

I

EBO

–0.01

3

µA

V

EB =0.5 V, IC =0

Open collector

DC current gain

h

FE

100

170

250

V

CE =3 V, IC =70mA

Pulse measured

Table 4

General AC Characteristics at

T

A =25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Transition frequency

f

T

31

41

–

GHz

V

CE =3 V, IC =70mA,

f =1GHz

Collector base capacitance

C

CB

–

0.26

0.4

pF

V

CB =3 V, VBE =0 V

f =1MHz

Emitter grounded

Collector emitter capacitance

C

CE

–0.45

–

pF

V

CE =3 V, VBE =0 V

f =1MHz

Base grounded

Emitter base capacitance

C

EB

–1.3

–pF

V

EB =0.5 V, VCB =0 V

f =1MHz

Collector grounded

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