1

2

4

3

Product Name Package

Pin Configuration

Marking

BFP720FESD TSFP-4-1

1 = B

2 = E

3 = C

4 = E

T3s

Robust High Performance Low Noise Bipolar RF Transistor

BFP720FESD

Data Sheet

7

Revision 1.1, 2010-06-29

1

Features

•

Robust high performance low noise amplifier based on

Infineon´s reliable, high volume SiGe:C wafer technology

•

2 kV ESD robustness (HBM) due to integrated protection circuits

•

High maximum RF input power of 21 dBm

•

0.6 dB minimum noise figure typical at 2.4 GHz,

0.8 dB at 10 GHz, 5 mA

•

26 dB maximum gain (

G

22 dB at 5.5 GHz, 15 mA

•

21 dBm OIP3 typical at 5.5 GHz, 15 mA

•

Accurate SPICE GP model available to enable effective

design in process (see chapter 6)

•

Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads

Applications

As Low Noise Amplifier (LNA) in

•

Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,

Bluetooth

•

Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB

•

3G/4G UMTS/LTE mobile phone applications

•

Multimedia applications such as mobile/portable TV, CATV, FM Radio

•

ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer, amplifier in VCO's and buffer amplifier.

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions