BFP740ESD datasheet(9/29 Pages) INFINEON

Part #	BFP740ESD

Description	Robust High Performance Low Noise Bipolar RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFP740ESD

Product Brief

Data Sheet

9

Revision 1.0, 2010-06-29

Table 2

Quick Reference AC Characteristics at

T

A = 25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Transition frequency

f

T

–45

–

GHz

V

CE =3 V, IC =25mA

f =2GHz

V

CE = 3 V, f = 2.4 GHz

Maximum power gain

dB

Low noise operation point

G

ms

–22

–

I

C =6mA

High linearity operation point

G

ms

–25.5

–

I

C =25mA

Transducer gain

dB

Z

S = ZL =50 Ω

Low noise operation point

S

21

–19.5

–

I

C =6mA

High linearity operation point

S

21

–22

–

I

C =25mA

Minimum noise figure

dB

Z

S = Zopt

Minimum noise figure

NF

min

–0.65

–

I

C =6mA

Associated gain

G

ass

–20

–

I

C =6mA

Linearity

dBm

Z

S = ZL =50 Ω

1 dB gain compression point

OP

1dB

–10.5

–

I

C =25mA

3rd order intercept point

OIP

3

–25

–

I

C =25mA

V

CE =3V, f = 5.5 GHz

Maximum power gain

dB

Low noise operation point

G

ms

–19

–

I

C =6mA

High linearity operation point

G

ma

–18.5

–

I

C =25mA

Transducer gain

dB

Z

S = ZL =50 Ω

Low noise operation point

S

21

–13

–

I

C =6mA

High linearity operation point

S

21

–14.5

–

I

C =25mA

Minimum noise figure

dB

Z

S = Zopt

Minimum noise figure

NF

min

–0.9

–

I

C =6mA

Associated gain

G

ass

–13.5

–

I

C =6mA

Linearity

dBm

Z

S = ZL =50 Ω

1 dB gain compression point

OP

1dB

–10

–

I

C =25mA

3rd order intercept point

OIP

3

–24

–

I

C =25mA

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