BFR193_07 datasheet(3/7 Pages) INFINEON

Part #	BFR193

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 7 page

2007-03-30

3

BFR193

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 8 V, f = 500 MHz

fT

6

8

-

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

-

0.66

1

pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

-

0.28

-

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

2.25

-

Noise figure

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 1.8 GHz

F

-

1

1.6

-

dB

Power gain, maximum available1)

IC = 30 mA, VCE = 8 V, ZS = ZSopt ,

ZL = ZLopt , f = 900 MHz

IC = 30 mA, VCE = 8 V, ZS = ZSopt ,

ZL = ZLopt , f = 1.8 GHz

Gma

-

15

10

-

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,

f = 900 MHz

IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,

f = 1.8 GHz

|S21e|2

-

13

7.5

-

dB

1Gma = |S21 / S12| (k-(k²-1)1/2)

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