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SPMQ613-01 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SPMQ613-01 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0027A DOC SPMQ613-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 3/ SYMBOL MIN TYP MAX UNIT Collector - Emitter Breakdown Voltage (ICES = 250μA, VGE = 0V) BVCES 600 670 –– V Gate - Emitter Threshold Voltage (IC = 0.25mA, VCE = VGE) TA= 25 oC TA= 125 oC TA= -55 oC VGE(th) 2.5 - - 5.2 5.0 6.0 6 - - V Collector - Emitter Saturation Voltage IC = 100A @ 25 oC IC = 150A @ 25 oC IC = 200A @ 25 oC IC = 300A @ 25 oC IC = 100A @ 125 oC IC = 200A @ 125 oC IC = 300A @ 125 oC IC = 100A @ -55 oC IC = 200A @ -55 oC IC = 300A @ -55 oC VCE(on) –– –– 1.70 2.15 2.35 3.00 1.65 2.20 2.70 1.70 2.25 2.90 2.4 - - - 2.2 - - - - - V Gate - Emitter Leakage Current (VGE = ±20V, VCE = 0V) TA= 25 oC TA= 125 oC TA= -55 oC IGES –– 0.01 0.05 0.005 1.0 10 - μA Collector Leakage Current (VCE = 600 V, VGE = 0V) TA= 25 oC TA= 125 oC TA= -55 oC ICES1 ICES2 ICES3 –– –– –– 25 7 2.5 200 –– - μA mA μA Forward Transconductance (IC = IC2, VCE = 10V) gfs 20 –– –– S Gate Charge Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VGE = 15V IC = 10A VCE = 300V Qg(on) Qge Qgc –– –– –– 575 70 320 650 150 370 nC Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1 MHz Cies Coes Cres –– –– –– 84001 400 600 10,000 2,000 1,000 pF Resistive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC = 300V VGE = 15V IC = 40A td(on) tr td(off) tf –– –– –– –– 150 550 550 2000 - - - - nsec Inductive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC = 300V VGE = 15V IC = 45A RG = 10Ω L = 100µH td(on) tr td(off) tf –– –– –– –– 150 140 600 300 500 175 1000 500 nsec ANTI-PARALLEL DIODE Peak Current Ipk –– –– 200 A Peak Inverse Voltage PIV –– –– 600 V Average Current Iavg –– –– 100 A Diode Forward Voltage @ IF=100A, TJ=25 oC IF= 100A, TA= 25 oC IF= 300A, TA= 25 oC IF= 300A, TA= -55 oC IF= 300A, TA= 125 oC VF –– 1.1 1.6 1.8 1.4 1.5 - - - V Reverse Recovery Time (If=40A, di/dt=200A/µsec) trr –– 200 2000 nsec |
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