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BG3123 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BG3123 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 2007-04-26 1 BG3123... 1 6 2 3 5 4 DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) • Optimized for UHF (amp. B) and VHF (amp. A) • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BG3123 BG3123R G2 G1 GND AGC RF Input Drain RF Output + DC VGG RG1 ) * " # $ ! 1 23 4 5 6 B A ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3123 BG3123R SOT363 SOT363 1=G1* 1=G1* 2=G2 2=S 3=D* 3=D* 4=D** 4=D** 5=S 5=G2 6=G1** 6=G1** KOs KRs * For amp. A; ** for amp. B 180° rotated tape loading orientation available |
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