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under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR INTERSIL 2N4351 

HIGH DRAIN CURRENT 

HIGH GAIN 

ABSOLUTE MAXIMUM RATINGS  

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +200°C 

Operating Junction Temperature ‐55°C to +150°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

375mW 

MAXIMUM CURRENT

Drain to Source (Note 1) 

100mA 

MAXIMUM VOLTAGES 

Drain to Body 

25V 

Drain to Source 

25V 

Peak Gate to Source (Note 2) 

±125V 

2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Drain to Source Breakdown Voltage 

25 

‐‐ 

‐‐ 

 

V 

Drain to Source “On” Voltage 

‐‐ 

‐‐ 

1 

Gate to Source Threshold Voltage 

1 

‐‐ 

5 

Gate Leakage Current 

‐‐ 

‐‐ 

10 

pA 

Drain Leakage Current “Off” 

‐‐ 

‐‐ 

10 

nA 

VGS = 10V,   VDS = 10V 

Drain Current “On” 

3 

‐‐ 

‐‐ 

mA 

VGS = 10V,  VDS = 10V 

Forward Transconductance 

1000 

‐‐ 

‐‐ 

µS 

VDS = 10V,    ID = 2mA ,   f = 1MHz 

Drain to Source “On” Resistance 

‐‐ 

‐‐ 

300 Ω 

VGS = 10V,   ID = 0A,   f = 1kHz 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

1.3  

pF 

VDS = 0V,     VGS = 0V ,   f = 140kHz 

Input Capacitance 

‐‐ 

‐‐ 

5 

VDS = 10V,     VGS = 0V ,   f = 140kHz 

Drain to Body Capacitance 

‐‐ 

‐‐ 

5.0 

VDB = 10V,   f = 140kHz 

  

 

 

 

 

 

SWITCHING CHARACTERISTICS                                                                                                                                     TIMING WAVEFORMS 

SYMBOL 

CHARACTERISTIC 

MAX 

UNITS 

Turn On Delay Time 

45  

ns 

Turn On Rise Time 

65 

Turn Off Delay Time 

60 

Turn Off Fall Time 

100 

 

 

  

                                  SWITCHING TEST CIRCUIT 

The 2N4351 is an enhancement mode N-Channel Mosfet

2N4351

N-CHANNEL MOSFET

Micross Components Europe

Tel: +44 1603 788967

TO-72 (Bottom View)

Available Packages:

2N4351 in TO-72

2N4351 in bare die.

Please contact Micross for full

package and die dimensions

* Body tied to case

Note 1 ‐ Absolute maximum ratings are limiting values above which 2N4351 serviceability may be impaired. 

Note 2 ‐ Device must not be tested at ±125V more than once or longer than 300ms.

2N4351 Features:

Low ON Resistance

Low Capacitance

High Gain

High Gate Breakdown Voltage

Low Threshold Voltage

The 2N4351 is an enhancement mode N-Channel

Mosfet designed for use as a General Purpose amplifier

or switch

The hermetically sealed TO-72 package is well suited

for high reliability and harsh environment applications.

(See Packaging Information).