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BSO615CG Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. BSO615CG
Description  SIPMOS Small-Signal-Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO615CG Datasheet(HTML) 4 Page - Infineon Technologies AG

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 4 / 13 page
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2006-08-25
Page 4
Rev. 2.0
BSO 615 C G
Electrical Characteristics, at
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Gate to source charge
VDD = 48 V, ID = 3.1 A
VDD = -48 V, ID = -2 A
N
P
Qgs
-
-
0.5
1.7
0.75
2.6
nC
Gate to drain charge
VDD = 48 V, ID = 3.1 A
VDD = -48 V, ID = -2 A
N
P
Qgd
-
-
6.3
4.3
9.5
6.5
Gate charge total
VDD = 48 V, ID = 3.1 A, VGS = 0 to 10V
VDD = -48 V, ID = -2 A, VGS = 0 to -10V
N
P
Qg
-
-
15
13.5
22.5
20
Gate plateau voltage
VDD = 48 V, ID = 3.1 A
VDD = -48 V, ID = -2 A
N
P
V(plateau)
-
-
3.1
-2.8
-
-
V
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
N
P
IS
-
-
-
-
3.1
-2
A
Inverse diode direct current,pulsed
TA = 25 °C
N
P
ISM
-
-
-
-
12.4
-8
Inverse diode forward voltage
VGS = 0 V, IF = IS
VGS = 0 V, IF = IS
N
P
VSD
-
-
0.8
-0.8
1.1
-1.1
V
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
VR = -30 V, IF=lS , diF/dt = -100 A/µs
N
P
trr
-
-
50
85
75
130
ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
VR = -30 V, IF=lS, diF/dt = -100 A/µs
N
P
Qrr
-
-
70
120
105
180
nC


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