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BSO615CG Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BSO615CG Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 13 page ![]() 2006-08-25 Page 4 Rev. 2.0 BSO 615 C G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Gate to source charge VDD = 48 V, ID = 3.1 A VDD = -48 V, ID = -2 A N P Qgs - - 0.5 1.7 0.75 2.6 nC Gate to drain charge VDD = 48 V, ID = 3.1 A VDD = -48 V, ID = -2 A N P Qgd - - 6.3 4.3 9.5 6.5 Gate charge total VDD = 48 V, ID = 3.1 A, VGS = 0 to 10V VDD = -48 V, ID = -2 A, VGS = 0 to -10V N P Qg - - 15 13.5 22.5 20 Gate plateau voltage VDD = 48 V, ID = 3.1 A VDD = -48 V, ID = -2 A N P V(plateau) - - 3.1 -2.8 - - V Reverse Diode Inverse diode continuous forward current TA = 25 °C N P IS - - - - 3.1 -2 A Inverse diode direct current,pulsed TA = 25 °C N P ISM - - - - 12.4 -8 Inverse diode forward voltage VGS = 0 V, IF = IS VGS = 0 V, IF = IS N P VSD - - 0.8 -0.8 1.1 -1.1 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs VR = -30 V, IF=lS , diF/dt = -100 A/µs N P trr - - 50 85 75 130 ns Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs VR = -30 V, IF=lS, diF/dt = -100 A/µs N P Qrr - - 70 120 105 180 nC |
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