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BSO615CG Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. BSO615CG
Description  SIPMOS Small-Signal-Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO615CG Datasheet(HTML) 1 Page - Infineon Technologies AG

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2006-08-25
Page 1
Rev. 2.0
BSO 615 C G
SIPMOS® Small-Signal-Transistor
Product Summary
N
P
Drain source voltage
VDS
60
-60
V
Drain-Source on-state
resistance
RDS(on)
0.11
0.3
W
Continuous drain current
ID
3.1
-2
A
Features
· Dual N- and P -Channel
· Enhancement mode
· Logic Level
· Avalanche rated
· Pb-free lead plating; RoHS compliant
Type
Package
Marking
BSO 615 C
PG-DSO-8
615C
Maximum Ratings,at
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
N
P
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
3.1
2.5
-2
-1.6
A
Pulsed drain current
TA = 25 °C
ID puls
12.4
-8
Avalanche energy, single pulse
ID = 3.1 A , VDD = 25 V, RGS = 25 W
ID = -2 A , VDD = -25 V, RGS = 25 W
EAS
47
-
-
70
mJ
Avalanche energy, periodic limited by
Tjmax
EAR
0.2
0.2
Reverse diode d
v/dt, Tjmax = 150 °C
IS = 3.1 A, VDS = 48 V, di/dt = 200 A/µs
IS = -2 A, VDS = -48 V, di/dt = -200 A/µs
d
v/dt
6
-
-
6
kV/µs
Gate source voltage
VGS
±20
±20
V
Power dissipation
TA = 25 °C
Ptot
2
2
W
Operating and storage temperature
Tj , Tstg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56


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