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BSO615CG Datasheet(PDF) 10 Page - Infineon Technologies AG |
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BSO615CG Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 13 page ![]() 2006-08-25 Page 10 Rev. 2.0 BSO 615 C G Typ. capacitances (N-Ch.) C = f(VDS) parameter: VGS=0 V, f=1 MHz 0 5 10 15 20 25 VDS 35 V 1 10 2 10 3 10 pF Ciss Coss Crss Typ. capacitances (P-Ch.) C = f(VDS) parameter: VGS=0 V, f=1 MHz 0 -5 -10 -15 -20 -25 VDS -35 V 1 10 2 10 3 10 pF Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD), (N-Ch.) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD -2 10 -1 10 0 10 1 10 A BSO 615 C T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) Forward characteristics of reverse diode IF = f (VSD), (P-Ch.) parameter: Tj , tp = 80 µs 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD -2 10 -1 10 0 10 1 10 A BSO 615 C T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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