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BSO615CG Datasheet(PDF) 11 Page - Infineon Technologies AG |
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BSO615CG Datasheet(HTML) 11 Page - Infineon Technologies AG |
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11 / 13 page  2006-08-25 Page 11 Rev. 2.0 BSO 615 C G Avalanche Energy EAS = f (Tj) (N-Ch.) parameter: ID = 3.1 A , VDD = 25 V RGS = 25 W 25 45 65 85 105 125 °C 165 Tj 0 5 10 15 20 25 30 35 40 mJ 50 Avalanche Energy EAS = f (Tj) parameter: ID = -2 A , VDD = -25 V RGS = 25 W 25 45 65 85 105 125 °C 165 Tj 0 10 20 30 40 50 60 mJ 80 Typ. gate charge (N-Ch.) VGS = f (QGate) parameter: ID = 3.1 A 0 2 4 6 8 10 12 14 16 nC 20 QGate 0 2 4 6 8 10 12 V 16 BSO 615 C DS max V 0,8 DS max V 0,2 Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = -2 A 0 2 4 6 8 10 12 14 16 nC 20 QGate 0 -2 -4 -6 -8 -10 -12 V -16 BSO 615 C DS max V 0,8 DS max V 0,2 |
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