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BSO615CG Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # BSO615CG
Description  SIPMOS Small-Signal-Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO615CG Datasheet(HTML) 2 Page - Infineon Technologies AG

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 2 / 13 page
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2006-08-25
Page 2
Rev. 2.0
BSO 615 C G
Termal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Thermal resistance, junction - soldering point
( Pin 4)
N
P
RthJS
-
-
-
-
40
40
K/W
SMD version, device on PCB:
@ min. footprint; t
£ 10 sec.
@ 6 cm2 cooling area 1); t
£ 10 sec.
@ min. footprint; t
£ 10 sec.
@ 6 cm2 cooling area 1); t
£ 10 sec.
N
N
P
P
RthJA
-
-
-
-
-
-
-
-
100
62.5
110
62.5
Static Characteristics, at
Tj = 25 °C, unless otherwise specified
Drain- source breakdown voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
N
P
V(BR)DSS
60
-60
-
-
-
-
V
Gate threshold voltage,
VGS = VDS
ID = 20 µA
ID = -450 µA
N
P
VGS(th)
1.2
-1
1.6
-1.5
2.0
-2.0
Zero gate voltage drain current
VDS = 60 V, VGS = 0 V, Tj = 25 °C
VDS = 60 V, VGS = 0 V, Tj = 125 °C
VDS = -60 V, VGS = 0 V, Tj = 25 °C
VDS = -60 V, VGS = 0 V, Tj = 125 °C
N
N
P
P
IDSS
-
-
-
-
0.1
10
-0.1
-10
1
100
-1
-100
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
N
P
IGSS
-
-
10
-10
100
-100
nA
Drain-source on-state resistance
VGS = 4.5 V, ID = 2.7 A
VGS = -4.5 V, ID = -1.7 A
N
P
RDS(on)
-
-
0.1
0.27
0.15
0.45
W
Drain-source on-state resistance
VGS = 10 V, ID = 3.1 A
VGS = -10 V , ID = -2 A
N
P
RDS(on)
-
-
0.07
0.19
0.11
0.3
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.


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